Their devices, featuring vertical nanowires only a few nanometers wide, can deliver performance comparable to state-of-the-art silicon transistors while operating efficiently at much lower voltages than conventional devices.
“This is a technology with the potential to replace silicon, so you could use it with all the functions that silicon currently has, but with much better energy efficiency,” says Yanjie Shao, an MIT postdoc and lead author of a paper on the new transistors.