Part 5/9:
The development of RRAM was a paramount milestone in memory technology. Originating from concepts involving nanocables created by Yubo Lee, the work explored the unique properties of silicon oxide interfaced with conductive materials. This led to a breakthrough, where the researchers discovered the ability to achieve two stable states—high and low—through controlled voltage interactions.
As the tests progressed, different configurations were explored, including vertical arrays and various interfacing materials ranging from carbon to metals. Researchers examined the damage states of the silicon oxide substrate and learned how to manipulate these states effectively to create functional memory cells.