Part 6/9:
As the researchers delved deeper into understanding the silicon oxide switching phenomena, they faced internal resistance and differing opinions. While some believed strongly in the carbon switching theory, others, led by Yao, identified the silicon oxide interaction as the core mechanism of functionality.
The amalgamation of voices, ideas, and collaborative research led to successful experiments that proved the resilience of silicon oxide memory under various environmental conditions, including radiation exposure. This radiation-hard feature was particularly attractive for potential applications in fields requiring durable electronics.