Part 5/7:
The path to widespread gallium nitride adoption is riddled with challenges. One major hurdle is the familiarity and established infrastructure surrounding silicon. Many manufacturers are accustomed to silicon; adopting GaN requires overhauling circuits to optimize performance.
Moreover, the creation of gallium nitride is more demanding than that of silicon. Its production often necessitates high temperatures and pressures, which can introduce defects and increase costs. While some innovators are attempting to grow GaN on silicon substrates to preserve existing systems, the requisite special apparatuses present another roadblock.