Discovering the Role of Phase Separation
The specific RRAM studied, a filament-type valence change memory (VCM), sandwiches an insulating tantalum oxide layer between two platinum electrodes. When a certain voltage is applied to the platinum electrodes, a conductive filament forms a tantalum ion bridge passing through the insulator to the electrodes, which allows electricity to flow, putting the cell in a low resistance state representing a “1” in binary code. If a different voltage is applied, the filament is dissolved as returning oxygen atoms react with the tantalum ions, “rusting” the conductive bridge and returning to a high resistance state, representing a binary code of “0.”
It was once thought that RRAM retains information over time because oxygen is too slow to diffuse back. However, a series of experiments revealed that previous models have neglected the role of phase separation.