The MIT team fabricated experimental transistors from unique semiconductor materials like gallium antimonide and indium arsenide, rather than traditional silicon. The research is funded, in part, by Intel Corporation and was published recently in Nature Electronics.
However, the real magic is in their unique tiny 3D design, engineered with precision tools at MIT.nano, the university's dedicated facility for nanoscale research. The transistors feature vertical nanowire heterostructures with a minuscule diameter of just 6 nanometers, which the researchers believe are the smallest 3D transistors ever reported.